Samsung presented new high-performance GDDR7 and HBM3E memory

During the Memory Tech Day event, Samsung shared some information about some next-generation memory models, GDDR7 and HBM3E, the latter designed to integrate well with AI and GPUs.

GDDR7 has been in development for some time and will be used in the next-generation RTX 50 (Blackwell) and RX 8000 (RDNA 4) graphics cards. Among other things, the new memory is said to consume 50% less power in standby mode, although Samsung didn't give too many details.

GDDR7 will also use PAM3 signalization, which is easier to manufacture and therefore more accessible.

Video cards with GDDR7 memory will be available in a year's time at the earliest and are likely to be found first on the most sophisticated machines.

The HBM3E is another next-generation memory that Samsung has unveiled under the codename Shinebolt. The memory can reach a speed of 9.8 Gbps per contact with a bandwidth of 1225 GB/s per stack, which is significantly higher than the figures provided by its predecessors. Separate instances of the memory can also be linked together, allowing up to 216GB to be achieved with 7.35TB of bandwidth.