Samsung has announced it is starting mass production of its 9th generation V9 QLC NAND flash memory, following the launch of its 9th generation TLC. The company promises higher speed, affordable prices, and storage densities up to 86% higher than the one of the previous generation The storage density of V9 QLC will be higher, thanks to Can Hole Etching technology, which allows for a record number (280) of layers thanks to the dual-stack design.
This generation of memory also utilizes Designed Mold and Predictive Program technologies to increase storage capacity by 20% and I/O speeds by 60%. Another distinctive characteristic of the new memory lineup is the reduced power consumption, which is made possible by Low-Power Design technology, reducing power consumption by 30% during data reading and 50% during data writing.
Samsung intends to use flash memory in a variety of products, including consumer SSDs, Universal Flash Storage (UFS) for mobile devices, and even server SSDs for cloud solutions, proving the versatility of the new drive.
As for competitors, the new generation of memory from Samsung has 50% and 30% higher density and performance, respectively (compared to its closest competitor).
But the main feature of the Samsung flash memory is that it will cost much less compared to the rest of the lineup. This is all thanks to technical upgrades and improved efficiency that will allow the V9 QLC to have performance on par with TLC (Triple-Level Cell) memory.
